发明名称 |
Reaction chamber for depositing thin film |
摘要 |
Provided is a reaction chamber for depositing a thin film. The reaction chamber includes a reactor block; a wafer block located inside the reactor block; a top plate that covers the reactor block to maintain a predetermined pressure; a feeding unit which supplies reactive gases to the reactor block; a shower head, which is installed in the top plate and includes a plurality of first spray holes for spraying the first reactive gas on a wafer and a plurality of second spray holes for spraying the second reactive gas; and an exhaust unit which expels gases from the reactor block. The feeding unit includes a feeding block; a distributing block; two or more first gas transfer pipes; and a second gas transfer pipe. The shower head includes an upper diffusion block, an intermediate diffusion block, and a lower diffusion block.
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申请公布号 |
US2004149212(A1) |
申请公布日期 |
2004.08.05 |
申请号 |
US20030748098 |
申请日期 |
2003.12.30 |
申请人 |
CHO BYUNG CHUL;YOO KEUN JAE;LIM HONG JOO;BAE JANG HO;LEE SANG KYU;KYUNG HYUN SOO |
发明人 |
CHO BYUNG CHUL;YOO KEUN JAE;LIM HONG JOO;BAE JANG HO;LEE SANG KYU;KYUNG HYUN SOO |
分类号 |
H01L21/20;C23C16/44;C23C16/455;H01L21/205;(IPC1-7):C23C16/00 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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