TITANIUM UNDERLAYER FOR LINES IN SEMICONDUCTOR DEVICES
摘要
<p>A thin titanium underlayer 22 is included beneath a Titanium rich Titanium Nitride layer 28 in a metal line 20 on a silicon substrate to reduce stress voiding.</p>
申请公布号
WO2004066383(A1)
申请公布日期
2004.08.05
申请号
WO2003SG00011
申请日期
2003.01.20
申请人
SYSTEMS ON SILICON MANUFACTURING COMPANY PTE LTD;NG, KHIM HONG;NG, YEOW KEONG;KOH, KAR HWEE
