| 摘要 |
PROBLEM TO BE SOLVED: To provide a dielectric memory which prevents releasing of a lower electrode, an oxygen barrier film and a contact plug interface due to the oxidation of the contact plug of a stack type ferroelectric capacitor or a stress, and which can be highly integrated; and to provide a method for manufacturing the same. SOLUTION: The dielectric memory includes the lower electrode (3), a capacity insulating film (4), and an upper electrode (5) formed by sequentially laminating them on a substrate (1). The lower electrode (3) is formed by coating the contact plug (6) electrically connected to the substrate (1) to spread in its circumference, and the upper electrode (5) is formed to extend in a first direction (an upper electrode extending direction). The length (lower electrode extending distance) of the lower electrode (3) extending over the contact plug (6) is formed to become longer in a direction perpendicular to the first direction (upper electrode non-extending direction) of the upper electrode (5) than the first direction. COPYRIGHT: (C)2004,JPO&NCIPI
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