| 摘要 |
PROBLEM TO BE SOLVED: To shorten a substrate treatment time when growing a thin film on a substrate by surface reaction. SOLUTION: A purge line 12 in a susceptor region can introduce, for example, a helium gas with thermal conductivity higher than a nitrogen gas, and is provided in a placement unit 20. In a temperature increase process for heating the substrate 200 up to a treatment temperature, the helium gas with high thermal conductivity is introduced into the placement unit 20 by purge line 12 in the susceptor. As a result, heat in the heating means is efficiently transmitted to a substrate placement table for shortening the substrate heating time. COPYRIGHT: (C)2004,JPO&NCIPI
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