| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion implantation device with a charge exchange cell, minimizing generation of suppression-short between electrodes, for improved device operating rates. SOLUTION: The ion implantation device comprises an extracting electrode 3 for extracting ions generated in an ion source 2, a vapor pot 9 for performing charge exchange to the extracted ion, and a cylindrical collection cup 30 provided therebetween. Magnetic force generating means 32 is provided for generating a magnetic field inside the cylinder portion of the collection cup 30. Action of the magnetic field according to the Fleming's rule is influenced on a component of vapor from the vapor pot 9 to bend the travel direction of the component toward the collection cup 30 side. COPYRIGHT: (C)2004,JPO&NCIPI
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