| 摘要 |
PROBLEM TO BE SOLVED: To obtain a high-performance semiconductor element whose strain Si channel is formed into a thin film and which can prevent Ge from being diffused from its base and sufficient strain is applied to the Si channel. SOLUTION: The MOS semiconductor device has a strain relief SiGe layer 12 formed on an Si substrate 10 across an insulating layer 11, a strain Si layer 13 formed on the SiGe layer 12, a gate electrode 15 selectively formed on the strain Si layer 13 across a gate insulating film 14, and source to drain areas 16 and 17 formed in the strain Si layer 13 across the gate electrode 15. The strain Si layer 13 is machined in stripes orthogonally to a gate direction (gate width direction) and the SiGe layer 12 below the stripes are etched away. COPYRIGHT: (C)2004,JPO&NCIPI
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