| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing technique by which the deterioration of morphology on the surface of a metal or in the interface of the metal and a semiconductor and the expansion of the interface can be suppressed and, at the same time, contact resistance values can be stabilized and the joinability between electrodes and wiring bonding materials can be improved. SOLUTION: A 4H-SiC epitaxial layer 104 is formed to a thickness of 10 or moreμm on an SiC wafer 102 by epitaxially growing SiC. Then a contact buffering layer 106 containing at least an Si epitaxial layer formed by epitaxially growing Si is formed on the epitaxial layer 104. After treating the wafer 102, an electrode 108 is formed to a thickness of 0.1-1μm on the wafer 102 by vapor-depositing Al, AlSi, or poly-Si. After the electrode 108 is formed, an ohmic contact is realized in the contracting section between the semiconductor and metal (electrode) by performing heat treatment on the wafer 102 at an annealing temperature of≤700°C. COPYRIGHT: (C)2004,JPO&NCIPI
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