| 摘要 |
PROBLEM TO BE SOLVED: To provide a laser beam irradiation method, a laser irradiation equipment to perform irradiation, and a method to manufacture a semiconductor device, which includes the processes of semiconductor film crystallization, activation, heating and the like performed by means of laser beam irradiation. SOLUTION: Using a zooming function, the time required for laser annealing can be reduced by changing the length of the above-mentioned linear beams to meet the size of a semiconductor device formed in semiconductor film, which eases restrictions on the design rule. The above-mentioned zooming function is comprised of the one which is continuous and variable and the other for which several kinds of linear beam lengths can be chosen. COPYRIGHT: (C)2004,JPO&NCIPI
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