发明名称 GRAPHITE HEATER, APPARATUS AND METHOD FOR PRODUCING SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a graphite heater for producing a single crystal where a silicon single crystal can be produced with high production efficiency when the silicon single crystal is pulled up at a specified defect-free area or a specified defective area. SOLUTION: The graphite heater is used for producing the single crystal by a Czochralski method, is equipped with a terminal part where electric current is supplied and a cylindrical heating part by resistance heating and is set so as to surround a crucible containing a raw material molten liquid. A heating slit part is formed to space an upper slit extending from the upper edge of the heating part to downward and a lower slit extending from the lower edge of the heating part to upward alternately. The heat distribution at the heating part is changed so that the length of at least one slit among the upper slits is different from other upper slits and/or the length of at least one slit among the lower slits is different from other lower slits. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004217504(A) 申请公布日期 2004.08.05
申请号 JP20030285315 申请日期 2003.08.01
申请人 SHIN ETSU HANDOTAI CO LTD 发明人 SOEDA SATOSHI;IIDA MAKOTO;SAKURADA MASAHIRO
分类号 C30B15/14;(IPC1-7):C30B15/14 主分类号 C30B15/14
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