发明名称 |
Semiconductor device and method of fabricating the same |
摘要 |
A semiconductor device capable of suppressing increase of the capacitance while suppressing a thin-line effect of a silicide film is obtained. This semiconductor device comprises a first silicon layer formed on a semiconductor substrate through a gate insulator film with an upper portion and a lower portion larger in width than a central portion for serving as a gate electrode and a first silicide film formed on the first silicon layer for serving as the gate electrode.
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申请公布号 |
US2004150048(A1) |
申请公布日期 |
2004.08.05 |
申请号 |
US20030671458 |
申请日期 |
2003.09.29 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
USUI RYOSUKE;SASADA KAZUHIRO |
分类号 |
H01L21/28;H01L21/3213;H01L21/336;H01L29/423;H01L29/49;(IPC1-7):H01L23/62 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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