| 摘要 |
The invention relates to a method for producing a defined doping region (DG). For this purpose, the dopant is implanted into the semiconductor material (S) via a mask (M, MO) and is diffused into a desired depth under defined introduction conditions. In order to produce an even dopant profile, a mask (M, MO) is used for implantation that has a circular, closed mask opening (MO), permeable to the dopant and surrounding a mask region (MZ) that is impermeable to the dopant. |
