| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing a drop in power supply voltage without increasing the width of a power supply wiring connected to the power source node of a diffusion layer. <P>SOLUTION: The semiconductor is composed of the diffusion layer 1 with a plurality of power source nodes 7 provided, a first wiring layer 2, a second wiring layer 8, and a package 11. A first mesh type wiring 4 connected to the power source node 7 is provided to the first wiring layer 2. A second wiring 9 for supplying the power supply voltage to the first wiring 4 is provided to the second wiring layer 8. The first wiring 4 and the second wiring 9 are mutually connected at a plurality of places each other. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
