METHOD FOR MANUFACTURING EXPOSURE MASK, MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing an exposure mask which can correct the dimensional slip of the patterns without etching in a slightly deficient manner.

SOLUTION: The first resist pattern is formed on a light shielding film of a mask blank formed with the light shielding film on a substrate. The light shielding film is etched with the first resist pattern as an etching mask to form the mask pattern comprising a light shielding region where the light shielding film is left and a transmission region where the light shielding film is removed. With the light shielding film left in the light shielding region as the etching mask, the surface layer part of the substrate of the transmission region is etched.

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