| 摘要 |
A ferroelectric memory capable of suppressing false data reading or the like by increasing a read margin is obtained. This ferroelectric memory comprises a circuit applying a read voltage VR to a first electrode and a detector capable of detecting the difference between electric capacitances Cf0 and Cf1 of a ferroelectric film when the potential difference of a second electrode corresponding to the difference between the electric capacitances Cf0 and Cf1 of the ferroelectric film is in excess of a detection limit voltage VS. The electric capacitance C2 of the second electrode is set to satisfy the following expression: Cf0<C2<=½x{(Cf1-Cf0)VR/VS-(Cf1+Cf0)}
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