| 摘要 |
Disclosed here is a method for manufacturing a semiconductor device, which can prevent films from delamination and improve the reliability of the semiconductor. A first insulating film comprising a silicon carbide film, silicon carbide nitride film, or silicon oxide nitride film is formed as a barrier insulating film of the wiring, and then a second insulating film comprising a fluorine containing silicon oxide film is formed on the first insulating film by a high density plasma CVD method as a low permittivity insulating film. And, when forming the second insulating film, the semiconductor substrate is heated up to a predetermined deposition temperature using a heat-up plasma generated by a gas containing no oxygen such as an argon plasma. When the substrate reaches the predetermined deposition temperature, the insulating film deposition gas is introduced into the deposition chamber to deposit the second insulating film on the first insulating film. Consequently, the surface of the first insulating film is suppressed from oxidization, thereby the adhesion that functions between the first and second insulating films is improved.
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