| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a multi-value storage type nonvolatile storage device which can suppress the increase of circuit scale to the minimum and realize highly accurate write, read, and erase operations in a short period of time. <P>SOLUTION: In a process corresponding to the input of a read command, data read from a prescribed nonvolatile memory cell are stored in a second volatile memory, data stored in the second volatile memory are transferred to a first volatile memory, and data are outputted to the outside from the first volatile memory through the other terminal in accordance with a first clock signal. In the process corresponding to the input of a write command, data inputted from the outside via the other terminal in accordance with the first clock signal are stored in the first volatile memory, data stored in the first volatile memory are transferred to the second volatile memory, and data are written from the second volatile memory to the prescribed nonvolatile memory. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
