SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A semiconductor device including a nitride semiconductor layer comprises a buffer layer (2) which is formed on a silicon substrate (1) and has a structure wherein first layers (8) composed of AlN, third layers (10) composed of p-type GaN and second layers (9) composed of GaN are alternately arranged. A main semiconductor region (3) comprising a nitride semiconductor layer for formation of an HEMT is arranged on the buffer layer (2). The third layers (10) have a thickness of 0.5-50 nm. The third layers (10) have an effect of suppressing production of a two-dimensional electron gas. Consequently, lowering of resistance of the buffer layer (2) is prevented.