| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can be made very reliable and reduce the power consumption. <P>SOLUTION: The semiconductor device includes a first element isolation region 19 and a second element isolation region 29 which are both provided in a semiconductor layer 10. The width Y<SB>1</SB>of the first element isolation region 19 and the width Y<SB>2</SB>of the second element isolation region 29 are made different from each other. The ratio of depth X<SB>1</SB>to width Y<SB>1</SB>of the first element isolation region 19 is made nearly equal to the ratio of depth X<SB>2</SB>to width Y<SB>2</SB>of the second element isolation region 29. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
