发明名称 |
Method for fabricating semiconductor device with self-aligned storage node |
摘要 |
A method for fabricating a semiconductor device includes preparing a semiconductor substrate having a contact pad; forming a first insulating film having a storage node contact exposing the contact pad and having a stack structure of an upper interlayer insulating film, a bottom interlayer insulating film, and an etching stopper between the upper and bottom interlayer insulating layers that protrudes into the storage node contact; forming a first conductive film for a storage node on the substrate; forming a second insulating film where a portion of a surface corresponding to the storage node contact is recessed; forming an etching mask layer on the recessed portion of the second insulating film; etching the second insulating film using the etching mask layer; forming a second conductive film for a storage node on the substrate; etching the first and second conductive films to isolate nodes; and removing the etching mask layer, the second insulating film and the upper interlayer insulating film.
|
申请公布号 |
US2004152246(A1) |
申请公布日期 |
2004.08.05 |
申请号 |
US20030688079 |
申请日期 |
2003.10.16 |
申请人 |
YOON JAE-MAN;LEE YUN-JAE;LEE SANG-HYUN;KIM WOOK-JE |
发明人 |
YOON JAE-MAN;LEE YUN-JAE;LEE SANG-HYUN;KIM WOOK-JE |
分类号 |
H01L21/02;H01L21/336;H01L21/60;H01L21/768;H01L21/8242;H01L27/108;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|