发明名称 Manufacturing method of semiconductor device
摘要 In forming a high density plasma oxide film, a projection shaped like the mesa, the peaked roof, the cone or the like is formed on an element formation region. This projection gives rise to a problem of producing a polishing scar when the CMD (Chemical Mechanical Polishing) with a ceria slurry is performed. A film having a polishing rate equivalent to the one of the high density plasma oxide film is formed on the high density plasma oxide film to reinforce a projection in the shape of a triangular prism, a cone or such, and, thereafter, the polishing is carried out, using a ceria slurry. In another method, after the first CMP polishing is performed, using a silica slurry containing grains of small particle size which make no aggregation, the second CMP polishing is performed, using a ceria slurry.
申请公布号 US2004152337(A1) 申请公布日期 2004.08.05
申请号 US20040763337 申请日期 2004.01.26
申请人 ELPIDA MEMORY, INC. 发明人 TSUKAMOTO TAKEO
分类号 B24B37/00;H01L21/304;H01L21/3105;H01L21/3205;H01L21/321;H01L21/76;H01L21/768;(IPC1-7):H01L21/31 主分类号 B24B37/00
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