METHOD OF PREPARING DATA FOR PHOTOMASK HAVING OPTICAL PROXIMITY CORRECTION PATTERN AND PHOTOMASK HAVING OPTICAL PROXIMITY CORRECTION PATTERN

摘要

PROBLEM TO BE SOLVED: To provide a photomask which has an OPC (optical proximity correction) pattern and which can deal with scale down of the photomask pattern and does not generate an unnecessary transfer pattern on a wafer and to provide data for the photomask for this purpose.

SOLUTION: The pattern on the wafer corresponding to the data for the photomask is obtained by: using the design data corresponding to the shape of the pattern on the desired wafer or the first correction data obtained by correcting the design data as the original data for the photomask to be processed; and performing simulation or actual manufacture relating thereto. Further, a series of processing is repeated which consists of: the differential pattern acquisition processing to determine the differential pattern which is the difference between the pattern of the design data and the pattern on the wafer; and the correction processing to form the fresh data for the photomask by correcting the same so as to make the differential pattern smaller in succession thereto. The finally obtained data for the photomask is adopted as the data for the photomask having the optical proximity correction pattern after the correction. The correction processing newly obtains the data for the photomask by subjecting the data for the photomask to distributed correction processing by distributing the patterns of the sizes and minute intervals which cannot be resolved by the exposure wavelength on the wafer during the transfer exposure to the wafer.

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