发明名称 FLASH MEMORY SYSTEM
摘要 <p><P>PROBLEM TO BE SOLVED: To acquire a flash memory system which can substantially increase rewritable times of a flash memory by suppressing erasure of data as much as possible, even if a microprocessor does not carry a special program. <P>SOLUTION: The flash memory system comprises a sector determination circuit 13 which detects a sector of unwritten status out of a plurality of sectors (0)-(3) when receiving a write command from a microprocessor 1, and writes data received from the outside in an unwritten status sector when the sector determination circuit 13 detects the sector of unwritten status. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p>
申请公布号 JP2004220644(A) 申请公布日期 2004.08.05
申请号 JP20030003478 申请日期 2003.01.09
申请人 RENESAS TECHNOLOGY CORP;RENESAS SOLUTIONS CORP 发明人 AMI YASUHIRO;KAMIYA MIKIRO
分类号 G11C16/02;(IPC1-7):G11C16/02 主分类号 G11C16/02
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