| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device wherein the manufacturing process is simplified and the manufacturing time is shortened, and to provide a semiconductor device manufactured by the same. SOLUTION: The method comprises a step S1 wherein a Ti/Ni layer 12 is formed on the rear surface of an Si substrate 11, a step S2 wherein a coating is formed on the Ti/Ni layer 12, a step S3 wherein an Ni layer 14 is formed on an Al layer 13, a step S4 wherein the coating formed on the Ti/Ni layer 12 is removed, and a step S5 wherein Au layers 15, 15 are formed on the Ni layer 14 and the Ti/Ni layer 12. COPYRIGHT: (C)2004,JPO&NCIPI
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