| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which prevents the generation of cracking or chipping in a chip taken out of a semiconductor wafer and reduces a time for taking out a number of chips from a thin wafer. SOLUTION: The method comprises steps of applying a resist film 4 to the surface of a wafer in which a plurality of chip regions are formed, patterning the applied resist film 4 using a photolithography technique so that the resist film 4 remains only on the chip region, applying a resist film 5 to the rear of the semiconductor wafer, and dry-etching the semiconductor wafer. Thus, solidified chips 6 are obtained from the semiconductor wafer. COPYRIGHT: (C)2004,JPO&NCIPI |
