发明名称 |
Anti-reflection coatings for semiconductor lasers |
摘要 |
The present invention concerns an anti-reflection coating for semiconductor lasers, in particular a coating on the laser facet with advantageous properties resulting in improved reliability and reduced probability of specific breakdowns, especially so-called catastrophic optical damages (CODs). It is a quarter-wave coating with a predetermined reflectivity, preferably between 0 and 10% and consists of or comprises SiNx:H. It is preferably applied by a Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) process whose process parameters are controlled such that a desired optical thickness and refractive index of the coating are achieved. The PE-CVD process may be controlled to result in an Si/N ratio between about 0.5 and 1.5 and/or to produce a coating of essentially amorphous SiNx:H whose density approaches the density of crystalline Si3N4.
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申请公布号 |
US2004151226(A1) |
申请公布日期 |
2004.08.05 |
申请号 |
US20030735375 |
申请日期 |
2003.12.12 |
申请人 |
WITTMANN ANDREAS;GOTZA MARTIN;SOLAR MICHAEL;LATTA ERNST-EBERHARD;KELLNER TIM;KREJCI MARTIN |
发明人 |
WITTMANN ANDREAS;GOTZA MARTIN;SOLAR MICHAEL;LATTA ERNST-EBERHARD;KELLNER TIM;KREJCI MARTIN |
分类号 |
H01S5/028;H01S5/10;(IPC1-7):H01S5/00 |
主分类号 |
H01S5/028 |
代理机构 |
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地址 |
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