发明名称 |
Semiconductor device, and method of manufacturing the same |
摘要 |
There is described a semiconductor device having a storage node capacitor structure suitable for rendering memory cells compact, and storage nodes are prevented from tilting. The device includes a storage node which has a vertical surface extending in the direction perpendicular to the surface of a semiconductor substrate, and a dielectric film for tilt prevention purposes which is brought into close contact with the side surface of the vertical surface and which prevents the vertical surface from tilting.
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申请公布号 |
US2004150030(A1) |
申请公布日期 |
2004.08.05 |
申请号 |
US20030748303 |
申请日期 |
2003.12.31 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
NISHIMURA HIROAKI;MAMETANI TOMOHARU;NAGAI YUKIHIRO;KINUGASA AKINORI;KISHIDA TAKESHI |
分类号 |
H01L27/04;F02D41/00;F02M25/08;H01L21/822;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824;H01L29/76 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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