SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce a leak current by realizing mixed loading of a logic circuit provided inside an SOI structure and a circuit provided inside a bulk structure in one chip.

SOLUTION: In an SOI substrate having a supporting substrate, an embedded insulating film and a semiconductor film, a plurality of holes which pass through the semiconductor film and arrange a groove in the embedded insulating film are formed. A projecting part having a height higher than the depth of the hole is formed in the single crystalline semiconductor substrate. The projecting part 9 is put in the hole and the semiconductor substrate above the semiconductor film is removed. A plurality of MIS transistors are formed in the semiconductor film and an element is formed in the projecting part.

COPYRIGHT: (C)2004,JPO&NCIPI