| 摘要 |
PROBLEM TO BE SOLVED: To quickly deposit a thin film of high quality, as for a thin film deposition method and a thin film deposition system where film deposition is performed by alternatively feeding gases as raw materials. SOLUTION: In the thin film deposition method where TiCl4 as a gaseous starting material and NH<SB>3</SB>as a reaction gas are reacted to deposit a TiN thin film on a substrate, the NH<SB>3</SB>is irradiated with light with wavelength causing predissociation so as to be excited, and is then reacted with the gaseous starting material. COPYRIGHT: (C)2004,JPO&NCIPI
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