| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor integrated circuit device, which forms high quality and very thin oxide film which has homogeneous film thickness and proper reproducibility. SOLUTION: The method has a process of introducing a semiconductor wafer 1A to a heat treatment chamber 120 of an oxidation furnace 107; a process of replacing gas atmosphere with nitrogen in the heat treatment chamber 120; a process of synthesizing moisture from oxygen and hydrogen using catalyst at first temperature; a process of introducing the resultant moisture to the heat treatment chamber 120 of the oxidation furnace 107, and forming oxidizing atmosphere containing moisture on a first main surface of the semiconductor wafer 1A in the chamber 120, while maintaining vaporization condition; a process of performing thermal oxidation treatment of a silicon surface on the first main surface of the semiconductor wafer 1A to form an insulating film, by ramp heating the first main surface of the semiconductor wafer 1A up to second temperature higher than the first temperature in the oxidizing atmosphere containing the moisture in the heat treatment chamber 120; and a process of replacing the oxidizing atmosphere containing the moisture with nitrogen in the heat treatment chamber 120, after the completion of the previous process. COPYRIGHT: (C)2004,JPO&NCIPI
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