| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a highly reliable silicide film of a low resistance with a nitrogen introduction and to provide its manufacturing method. SOLUTION: After a trench type element isolation insulating film 2 enclosing an active region is formed in a semiconductor substrate 1, a gate insulating film 3 and a gate electrode 4 are formed on the active region. Thereafter, after a low concentration source/drain region 5 is formed sideward and beneath the gate electrode 4, a side wall 6 which comprises a laminated film of an L-shaped oxide film side wall 6a and a nitride film side wall 6b is formed. Thereafter, after a high concentration source/drain region 7 is formed sideward and beneath the side wall 6, nitrogen introduced layers 8a, 8b which are made amorphous by introducing nitrogen are formed. Thereafter, the oxide film side wall 6a is selectively etched to be retreated. Thereafter, in a silicide process, a cobalt silicide film is formed on the gate electrode 4 and the high concentration source/drain region 7. COPYRIGHT: (C)2004,JPO&NCIPI
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