| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology for improving the Q value of a monolithic capacitor in a high frequency circuit of 800MHz or more, and for reducing an insertion loss. SOLUTION: A wall-shaped guard G1(tungsten contact 8, plug 7, metallic layer 4a which is the same layer as that of a lower electrode 4, plug 11 and metallic layer 6a which is the same layer as that of an upper electrode 6) surrounding a clearance between the upper electrode 6 and the lower electrode 4 is arranged around a capacitor C1 constituted of the lower electrode 4, capacity insulating film 5 and upper electrode 6, and connected through a punched layer 9 to a semiconductor substrate 1 so that the guard G1 can be constituted as a GND potential. Thus, a radiation power leaking from the upper and lower electrodes can be suppressed. Therefore, the radiation loss can be reduced, and the Q value can be improved, and the insertion loss can be reduced. COPYRIGHT: (C)2004,JPO&NCIPI
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