发明名称 |
APPARATUS FOR EVALUATING INHERENT CHARACTERISTIC OF ADDITIVE ON GROWTH IN ELECTROLYTIC PLATING, ELECTROLYTIC PLATING METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To solve a problem in electrolytic plating that unless a semiconductor substrate is immersed in a plating bath and copper of the main material is actually deposited, the balance and the controllability of various additives can not be determined. SOLUTION: This evaluating apparatus has a first graph-making means for plotting variations of precipitation quantity corresponding to variations in a rotation speed with respect to additive concentrations; a second graph-making means for approximating a curve of each additive concentration in the produced graph into two straight lines in regions of the low rotation speed and a high rotation speed, determining an intersection point of the two straight lines, plotting the precipitation quantity corresponding to the rotation speed on every additive concentration, and approximating the points into a straight line to make the graph; and a means for calculating a gradient of the straight line obtained by the above means as the inherent characteristic value of the additive, arranged in a CVS (cyclic voltammetric stripping) instrument. COPYRIGHT: (C)2004,JPO&NCIPI
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申请公布号 |
JP2004217997(A) |
申请公布日期 |
2004.08.05 |
申请号 |
JP20030006155 |
申请日期 |
2003.01.14 |
申请人 |
FUJITSU LTD |
发明人 |
KAMIYOSHI GOJI;SHIMIZU NORIYOSHI;NAKAMURA TOMOJI |
分类号 |
G01N33/00;C25D7/12;C25D21/12;C25D21/14;G01N27/48;H01L21/288;H01L21/3205;(IPC1-7):C25D21/14;H01L21/320 |
主分类号 |
G01N33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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