发明名称 Semiconductor integrated circuit device
摘要 In an oscillator, on one major surface of a substrate consisting of a semiconductor material there are arranged a FET, an output matching circuit having a diode, an LC series resonant circuit having a capacitor and an inductor, a transmission line, and a source inductor. The source of the FET is grounded through a source inductor. The drain of the FET is connected to the anode of the diode constituting an output matching circuit through a transmission line. The FET amplifies a high-frequency signal input to the gate, and outputs the high-frequency signal from the drain to an output matching circuit. The diode regulates an oscillation power.
申请公布号 US2004150482(A1) 申请公布日期 2004.08.05
申请号 US20040762338 申请日期 2004.01.23
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 MATSUZUKA TAKAYUKI
分类号 H03G11/02;H03B5/02;H03B5/18;(IPC1-7):H03H7/38 主分类号 H03G11/02
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