| 摘要 |
A bonded wafer 27 and a residual wafer 28 are placed in a state of being superimposed on each other on a susceptor 20 disposed in a heat treatment 10. A Bernoulli chuck 1 is moved to a wafer holding position 60 on a susceptor 20 by driving an arm 56, sucks the bonded wafer 27 positioned on the upper side and then moves to a bonded wafer recovery table 50' to recover the bonded wafer there. Then, similarly, the Bernoulli chuck 1 suction holds the residual wafer 28 at the wafer holding position 60 and then moves to a residual wafer recovery table 50'' to recover the residual wafer there. With such a construction adopted, in a method for manufacturing a bonded wafer according to a so-called smart-cut method, not only is the separated bonded wafer recovered suppressing occurrence of a defect, deficiency and contamination, but there is also provided a method for manufacturing a bonded wafer capable of automation suitable for mass production.
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