发明名称 |
Insitu post atomic layer deposition destruction of active species |
摘要 |
Systems and methods for insitu post atomic layer deposition (ALD) destruction of active species are provided. ALD processes deposit multiple atomic layers on a substrate. Pre-cursor gases typically enter a reactor and react with the substrate resulting in a monolayer of atoms. After the remaining gas is purged from the reactor, a second pre-cursor gas enters the reactor and the process is repeated. The active species of some pre-cursor gases do not readily purge from the reactor, thus increasing purge time and decreasing throughput. A high-temperature surface placed in the reactor downstream from the substrate substantially destroys the active species insitu. Substantially destroying the active species allows the reactor to be readily purged, increasing throughput.
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申请公布号 |
US2004152304(A1) |
申请公布日期 |
2004.08.05 |
申请号 |
US20030356981 |
申请日期 |
2003.01.30 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
SARIGIANNIS DEMETRIUS;MENG SHUANG;DERDERIAN GARO J. |
分类号 |
C23C16/44;C23C16/455;C23C16/46;H01L21/285;H01L21/316;(IPC1-7):H01L21/44;H01L21/31;H01L21/469 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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