MEMORY DEVICE HAVING A P<+ >GATE AND THIN BOTTOM OXIDE AND METHOD OF ERASING SAME

摘要

A non-volatile memory device (10) includes a semiconductor substrate (12) and an N-type source (14) and drain (16) within the substrate (12). An oxide-nitride-oxide (ONO) stack (26, 28, 30) is formed over the substrate (12). The ONO stack (26, 28, 30) includes a thin bottom oxide layer (26). A P<+> polysilicon gate electrode (32) is formed over the ONO stack (26, 28, 30). The memory device (10) is operative to perform a channel erase operation in which a pair of charge storing cells (36, 38) within the nitride layer (28) are erased simultaneously.