| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing method of liquid phase epitaxial growth substrate to realize improvement in the element yield by holding the substrate with stable flattening and removing surface defect without generation of uneven polishing. <P>SOLUTION: The liquid phase epitaxial growth substrate 1 is placed over a smooth surface 2f and the liquid phase epitaxial growth substrate 1 and smooth surface 2f are sucked with each other by intensifying step by step the sucking force with a sucking means 4. Thereafter, the polishing surface 4f of the polishing means 4 is placed in contact with the surface of the substrate 1 with a pressing means 5, and this polishing means 4 is controlled by a drive means 7 to generate ultrasonic wave vibration in the surface direction. Accordingly, an internal stress of the liquid phase epitaxial growth substrate 1 escapes in the surface direction and thereby stable flattening can be realized. Moreover, since amount of polishing is very small, the surface is uniformly polished and thereby element yield can be improved. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
