| 摘要 |
PROBLEM TO BE SOLVED: To provide a stack metal gate MOSFET, which can use a common material at PMOS and NMOS of CMOS device and generate different work functions using the same metal material, and to provide a manufacturing method thereof. SOLUTION: The method includes steps of forming a gate oxide layer which is arranged on a channel region, forming a first metal layer which is arranged on the gate oxide layer and has a first thickness, forming a second metal layer which is arranged on the first metal layer and has a second thickness, and setting a gate work function corresponding to the combination of the first and second thicknesses. In one embodiment, the first metal layer has a thickness smaller than about 1.5 nanometers (nm), and the second metal layer has a thickness greater than about 10 nm. Where, the step for setting the gate work function includes setting a gate work function, substantially corresponding to the second thickness of the second metal layer. COPYRIGHT: (C)2004,JPO&NCIPI
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