| 摘要 |
PROBLEM TO BE SOLVED: To provide a SONOS memory element and a method for manufacturing the same. SOLUTION: The SONOS memory element comprising a semiconductor substrate, an insulating film formed on the semiconductor substrate, an active layer formed on a predetermined region of the insulating film and defined into a source, a drain, and a channel region, and first and second side gate laminations stacked on each of both sides of the channel region and the method for manufacturing the same. Since at least two pieces of information can be stored per memory element, the degree of integration can be raised to 1.5 times to 2 times that in the conventional case because of the configuration in which the memory nodes are provided on the sides of the channel region. COPYRIGHT: (C)2004,JPO&NCIPI
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