| 摘要 |
PROBLEM TO BE SOLVED: To solve problems with a wafer heating device that it takes too much time for wafer temperatures to become stable when wafer change is made on a plate type ceramic, and also that the overshoot amount of wafer temperature is too large. SOLUTION: In the wafer heating device where two or more belt-like resistance heaters are formed on the surface or inside the plate type ceramic, recesses are arranged in the corresponding position to each of the resistance heaters of the plate type ceramic, and temperature measurement elements are arranged in the relative recess, the main feature of the wafer heating device is that the power flux density in the neighborhood of the corresponding temperature measurement element of at least one belt-like resistance heater arranged in the outermost periphery of the plate type ceramic is designed to be smaller than the average power flux density of the belt-like resistance heaters. COPYRIGHT: (C)2004,JPO&NCIPI
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