| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist pattern forming method with no inclination or pattern fall, along with a method of manufacturing a semiconductor device using the same. SOLUTION: When a pattern 13 which is at least a part of a resist pattern tilts beyond vertical direction relative to a substrate to be worked, a pattern side wall 13a which is on the side opposite to a pattern side wall 13b on the side of tilted pattern 13 is irradiated with electron ray 14, so that the pattern 13 is set almost vertical to the substrate. The electron ray 14 is preferred to irradiate near the interface between the pattern 13 and the substrate. Thus, the tilted resist pattern can be corrected to form a resist pattern of good shape. COPYRIGHT: (C)2004,JPO&NCIPI |
