| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device capable of downsizing a protective element having a silicide block region of the device more than that of prior arts. SOLUTION: In the semiconductor integrated circuit device, at least one of the drain region 16D or the source region 16S of a MOS transistor configuring the protective element of an input output circuit is separated by an interdigital pattern extended in the widthwise direction of a gate electrode 14 and the interdigital patterns are combined as a nest. Electrode contacts 19 are formed to interdigital teeth, the silicide block regions 18 are formed between the electrode contacts 19 and the gate electrodes 14, and the electrode contacts 19 and the silicide block regions 18 are respectively arranged as a row or a plurality of rows in the widthwise direction of the gate electrodes 14. COPYRIGHT: (C)2004,JPO&NCIPI
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