| 摘要 |
PROBLEM TO BE SOLVED: To improve an effect of on-voltage reduction for a semiconductor device. SOLUTION: A semiconductor region 213a and a semiconductor region 213b are separated by a gate electrode 206b and a gate insulating film 205 formed in a trench 215b. A p-body region 203a, a p<SP>+</SP>emitter region 203c, and an n<SP>+</SP>emitter region 204a are formed in the region 213a, and a p-body region 203c, a p<SP>+</SP>emitter region 203d, and an n-hole barrier region 211 are formed in the region 213b. The region 211 suppresses an outflow of the hole to an emitter electrode 209 to improve the effect of decreases in on-voltage. COPYRIGHT: (C)2004,JPO&NCIPI
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