发明名称 SUBSTRATE TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To realize a supply of a purge gas to the circumference of a substrate with a simpler configuration. SOLUTION: The substrate treatment apparatus is provided with a treatment chamber 1 for treating a wafer W therein with the use of a raw gas, a substrate support 2 for supporting the wafer W in the treatment chamber 1, a purge gas duct 4 for supplying the purge gas to the circumference of the wafer W supported by the substrate support 2, which has a purge gas supply port 3 of an outlet. The apparatus has further a cover member 5 which surrounds the substrate support 2 to form a buffer space S of the purge gas between itself and the substrate support 2, and composes the purge gas duct 4 so as to include the buffer space S. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004217956(A) 申请公布日期 2004.08.05
申请号 JP20030003537 申请日期 2003.01.09
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 ITAYA HIDEJI;KYODA MASAYUKI;SANO ATSUSHI
分类号 C23C16/44;H01L21/31;(IPC1-7):C23C16/44 主分类号 C23C16/44
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