发明名称 |
Apparatus and method for detecting over-programming condition in multistate memory device |
摘要 |
An apparatus and method for detecting an over-programming condition in a multistate memory cell. The invention is also directed to identifying the over-programmed cells and providing an alternate location at which to write the data intended for the over-programmed cell. An over-programmed state detection circuit generates an error signal when the data contained in a multistate memory cell is found to be over-programmed relative to its intended programming (threshold voltage level) state. Upon detection of an over-programmed cell, the programming operation of the memory system is modified to discontinue further programming attempts on the cell. The over-programmed state detection circuit is also used to assist in correcting for the over-programming state, permitting the programming error to be compensated for by the memory system.
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申请公布号 |
US2004153817(A1) |
申请公布日期 |
2004.08.05 |
申请号 |
US20030629279 |
申请日期 |
2003.07.29 |
申请人 |
MICRON TECHNOLOGIES, INC. |
发明人 |
NORMAN ROBERT D.;CHEVALLIER CHRISTOPHE J. |
分类号 |
G06F11/10;G11C11/56;G11C29/00;G11C29/52;(IPC1-7):G06F11/00 |
主分类号 |
G06F11/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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