发明名称 |
Methods of manufacturing and-type flash memory devices |
摘要 |
Example methods of manufacturing an AND-type flash memory device are disclosed. One example method may include forming a tunnel oxide layer and a first polysilicon layer in sequence on a silicon substrate; forming a floating gate by removing some part of the first polysilicon layer; forming a source/drain region at both sides of the floating gate by implanting ions into the substrate; forming spacers on sidewalls of the floating gate; depositing a sacrificial layer on the resulting substrate; exposing some part of the substrate and the floating gate; forming a first trench on the exposed part of the substrate and a second trench on the exposed part of the floating gate; depositing an oxide layer to fill the first and second trenches with the oxide layer; removing the oxide layer and the sacrificial layer through a fourth etching process until the floating gate is exposed; removing the spacers and the remaining sacrificial layer to form the floating gate with the second trench and a trench-type device isolation layer; and depositing a gate insulating layer and a second polysilicon layer to form a control gate in sequence on the resulting substrate.
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申请公布号 |
US2004152264(A1) |
申请公布日期 |
2004.08.05 |
申请号 |
US20030749489 |
申请日期 |
2003.12.30 |
申请人 |
JWA SEUNG HEE |
发明人 |
JWA SEUNG HEE |
分类号 |
H01L21/28;H01L21/336;H01L21/8247;H01L27/115;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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