| 摘要 |
There is provided a metal abrasive composition which can polish metal wiring at high speed and control the etching rate thereof in manufacturing a semiconductor device. A metal abrasive composition comprises (a) a chelating resin particle having at least one functional group selected from the group consisting of an aminocarboxylic acid group, an aminophosphonic acid group and an iminodiacetic acid group, (b) an inorganic particle, and (c) a surfactant having at least one functional group selected from a group consisting of a carboxylic acid group, a sulfonic acid group and a phosphoric acid group. |
