发明名称 |
Dielectric barrier layer for a copper metallization layer having a varying silicon concentration along its thickness |
摘要 |
A silicon nitride layer having a silicon-rich sub-layer and a standard sub-layer is formed on a copper surface to obtain excellent electromigration characteristics due to the standard sub-layer that is in contact with the copper, while maintaining a superior diffusion barrier behavior due to the silicon-rich sub-layer. By combining these sub-layers, the overall thickness of the silicon nitride layer may be kept small compared to conventional silicon nitride barrier layers, thereby reducing the capacitive coupling of adjacent copper lines.
|
申请公布号 |
US2004152333(A1) |
申请公布日期 |
2004.08.05 |
申请号 |
US20030717122 |
申请日期 |
2003.11.19 |
申请人 |
ZHAO LARRY;MARTIN JEREMY;RUELKE HARTMUT |
发明人 |
ZHAO LARRY;MARTIN JEREMY;RUELKE HARTMUT |
分类号 |
H01L21/318;H01L21/768;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/318 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|