发明名称 |
Low-voltage and interface damage-free polymer memory device |
摘要 |
One embodiment of the invention relates to a polymer memory device and a method of making it. The polymer memory device may include a composite or single layer of a ferroelectric polymer memory that addresses surface engineering needs according to various embodiments. The ferroelectric polymer memory structure may include crystalline ferroelectric polymer layers such as single and co-polymer compositions. The structure may include spin-on and/or Langmuir-Blodgett deposited compositions. One embodiment of the invention relates to a method making embodiments of the polymer memory device. One embodiment of the invention relates to a memory system that allows the polymer memory device to interface with various existing hosts.
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申请公布号 |
US2004150023(A1) |
申请公布日期 |
2004.08.05 |
申请号 |
US20040762955 |
申请日期 |
2004.01.21 |
申请人 |
LI JIAN;MU XIAO-CHUN;ISENBERGER MARK |
发明人 |
LI JIAN;MU XIAO-CHUN;ISENBERGER MARK |
分类号 |
H01L21/28;H01L27/115;H01L29/51;(IPC1-7):H01L21/00;H01L21/824;H01L29/76;H01L31/119;H01L27/108 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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