发明名称 PROCESS FOR REMOVING METALLIC IMPURITIES FROM SILICON CARBIDE COATED COMPONENTS OF A SILICON SINGLE CRYSTAL PULLING APPARATUS
摘要 A process for reconditioning a structural component of a crystal pulling apparatus for reuse therein. The structural component comprises a graphite substrate and a first protect layer of silicon carbide or glassy carbon the substrate, and optionally, a second protective layer comprising silicon covering the first protective layer. During the process, the structural component, while in a treatment chamber, is exposed to an iron-complexing gas comprising a halogen at a temperature and for a duration sufficient to reduce an iron concentration in the structural component.
申请公布号 WO2004044275(A3) 申请公布日期 2004.08.05
申请号 WO2003US35798 申请日期 2003.11.12
申请人 MEMC ELECTRONIC MATERIALS, INC.;SREEDHARAMURTHY, HARIPRASAD;BANAN, MOHSEN;HOLDER, JOHN, D. 发明人 SREEDHARAMURTHY, HARIPRASAD;BANAN, MOHSEN;HOLDER, JOHN, D.
分类号 C30B15/00 主分类号 C30B15/00
代理机构 代理人
主权项
地址